晶体大小： 5~10 mm 晶体种类： Semiconductor 纯度： >99.999 % 表征方法： EDS，SEM，Raman bandgap： 0 eV
质量标准：
参考文献：
1， Klipstein, P. C., et al. "Electronic properties of HfTe2." Journal of Physics C: Solid State Physics 19.25 (1986): 4953.
2，Mangelsen, S., et al. "Large nonsaturating magnetoresistance and pressure-induced phase transition in the layered semimetal HfTe 2." Physical Review B 96.20 (2017): 205148.
3，Smeggil, J. G., and S. Bartram. "The preparation and x ray characterization of HfTe2− x, x= 0.061." Journal of Solid State Chemistry 5.3 (1972): 391-394.
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