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GeBi2Te4晶体
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| 产品参数 | 参考文献
Shamoto, Shin-ichi, et al. "Structural study on optical recording materials Ge2Sb2+ xTe5 and GeBi2Te4." Physica B: Condensed Matter 385 (2006): 574-577. Tichý, L., M. Frumar, and J. Klikorka. "Some electrical properties of GeBi2Te4 single crystals." physica status solidi (a) 56.1 (1979): 323-326. Sterzi, A., et al. "Probing band parity inversion in the topological insulator GeBi2Te4 by linear dichroism in ARPES." Journal of Electron Spectroscopy and Related Phenomena 225 (2018): 23-27. Collaboration: Authors and editors of the volumes III/17H-17I-41E. "PbSb2S4, GeSb2Te4, GeBi2Te4, SnBi2Te4 crystal structure, physical properties." Ternary Compounds, Organic Semiconductors (2000): 1-5. Iwaya, Katsuya, et al. "STM Studies of ternary topological insulators GeBi2Te4 and SnBi2Te4." APS Meeting Abstracts. 2014. Marcinkova, A., et al. "Topological metal behavior in GeBi 2 Te 4 single crystals." Physical Review B 88.16 (2013): 165128. |
| 性状 | 材料名称
Name GeBi2Te4 性质分类 Electrical properties 拓扑绝缘体，红外材料 Topological Insulators 禁带宽度 Bangap 0.837 eV 合成方法 Synthetic method CVT 晶体结构 Crystal Structure trigonal 剥离难易程度 Degree of difficulty for exfoliation 易 Easy |
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